无锡固电ISC 供应BUW57 达林顿三极管

symbol

parameter

value

unit

vces

collector-emitter voltage

150

v

vceo

collector-emitter voltage

125

v

vebo

emitter-base voltage

7

v

ic

collector current-continuous

20

a

icm

collector current-peak

25

a

ib

base current-continuous

4

a

ibm

base current-peak

6

a

pc

collector power dissipation

@tc=25℃

120

w

tj

junction temperature

175

℃

tstg

storagetemperature range

-65~175

℃

symbol

parameter

max

unit

rth j-c

thermal resistance,junction to case

1.25

℃/w

symbol

parameter

conditions

min

typ.

max

unit

vceo(sus)

collector-emitter sustaining voltage

ic= 0.1a; ib= 0

125

v

vce(sat)

collector-emitter saturation voltage

ic= 18a; ib= 1.8a

1.5

v

vbe(sat)

base-emitter saturation voltage

ic= 18a; ib= 1.8a

1.7

v

ices

collector cutoff current

vce= 150v;vbe= -1.5v

vce= 150v;vbe= -1.5v;tc=125℃

1.0

10

ma

iebo

emitter cutoff current

veb= 7v; ic= 0

5.0

ma

ft

current-gain—bandwidth product

ic= 1a; vce= 10v

15

mhz

switching times

ton

turn-on time

ic= 15a; ib1= -ib2= 1.5a;

vcc= 60v; tp= 10μs

1.0

μs

ts

storage time

1.5

μs

tf

fall time

0.5

μs