无锡固电ISC 供应BD647 达林顿三极管
to-220三极管有意者请联系!
description
·collector-emitter breakdown voltage-
: v(br)ceo= 80v(min)
·high dc current gain
: hfe= 750(min) @ic= 3a
·low saturation voltage
·complement to type bd648
applications
·designed for use as complementary af push-pull output
stage applications
absolute maximum ratings(ta=25℃)
symbol | parameter | value | unit |
vcbo | collector-base voltage | 100 | v |
vceo | collector-emitter voltage | 80 | v |
vebo | emitter-base voltage | 5 | v |
ic | collector current-continuous | 8 | a |
icp | collector current-peak | 12 | a |
ib | base current-continuous | 0.3 | a |
pc | collector power dissipation @ ta=25℃ | 2 | w |
collector power dissipation @ tc=25℃ | 62.5 | ||
tj | junctiontemperature | 150 | ℃ |
tstg | storagetemperature range | -65~150 | ℃ |
electrical characteristics
tc=25℃unless otherwise specified
symbol | parameter | conditions | min | typ. | max | unit |
vceo(sus) | collector-emitter breakdown voltage | ic= 30ma; ib= 0 | 80 |
|
| v |
vce(sat)-1 | collector-emitter saturation voltage | ic= 3a; ib= 12ma |
|
| 2.0 | v |
vce(sat)-2 | collector-emitter saturation voltage | ic= 5a; ib= 50ma |
|
| 2.5 | v |
vbe(sat) | base-emitter saturation voltage | ic= 5a; ib= 50ma |
|
| 3.0 | v |
vbe(on) | base-emitter on voltage | ic= 3a ; vce= 3v |
|
| 2.5 | v |
icbo | collector cutoff current | vcb= 80v; ie= 0 |
|
| 0.2 | ma |
vcb= 50v; ie= 0; tc= 150℃ | 2.0 | |||||
iceo | collector cutoff current | vce= 40v; ib= 0 |
|
| 0.5 | ma |
iebo | emitter cutoff current | veb= 5v; ic= 0 |
|
| 5 | ma |
hfe | dc current gain | ic= 3a ; vce= 3v | 750 |
|
|
|
本产品的应用范围是达林顿，品牌是ISC，型号是BD647，材料是硅(Si)，封装形式是直插型，集电极Zui大耗散功率PCM是62.5，集电极Zui大允许电流ICM是8，极性是NPN型，结构是平面型，封装材料是塑料封装，是否提供加工定制是是