无锡固电半导体股份有限公司
双极型功率晶体管 , 双极型达林顿晶体管 , MOS场效应管

无锡固电ISC 供应BUW57 达林顿三极管


description

·collector-emitter sustaining voltage-

: vceo(sus)= 125v(min.)

·low collector saturation voltage-

: vce(sat)= 1.5v(max.) @ic= 18a

 

applications

·designed for high current, high speed, high power

applications.

 

 

absolute maximum ratings(ta=25℃)

symbol

parameter

value

unit

vces

collector-emitter voltage

150

v

vceo

collector-emitter voltage

125

v

vebo

emitter-base voltage

7

v

ic

collector current-continuous

20

a

icm

collector current-peak

25

a

ib

base current-continuous

4

a

ibm

base current-peak

6

a

pc

collector power dissipation

@tc=25℃

120

w

tj

junction temperature

175

tstg

storagetemperature range

-65~175

thermal characteristics

symbol

parameter

max

unit

rth j-c

thermal resistance,junction to case

1.25

℃/w

electrical characteristics

tc=25℃unless otherwise specified

symbol

parameter

conditions

min

typ.

max

unit

vceo(sus)

collector-emitter sustaining voltage

ic= 0.1a; ib= 0

125

 

 

v

vce(sat)

collector-emitter saturation voltage

ic= 18a; ib= 1.8a

 

 

1.5

v

vbe(sat)

base-emitter saturation voltage

ic= 18a; ib= 1.8a

 

 

1.7

v

ices

collector cutoff current

vce= 150v;vbe= -1.5v

vce= 150v;vbe= -1.5v;tc=125℃

 

 

1.0

10

ma

iebo

emitter cutoff current

veb= 7v; ic= 0

 

 

5.0

ma

ft

current-gain—bandwidth product

ic= 1a; vce= 10v

 

15

 

mhz

switching times

ton

turn-on time

ic= 15a; ib1= -ib2= 1.5a;

vcc= 60v; tp= 10μs

 

 

1.0

μs

ts

storage time

 

 

1.5

μs

tf

fall time

 

 

0.5

μs

 


本产品的应用范围是功率,品牌是isc,型号是BUW57,材料是硅,封装形式是TO-3,极性是NPN型,结构是平面型,封装材料是金属封装,是否提供加工定制是是

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