无锡固电半导体股份有限公司
双极型功率晶体管 , 双极型达林顿晶体管 , MOS场效应管

无锡固电ISC 供应BDX53 达林顿三极管


description                                             

·collector-emitter sustaining voltage-

: vceo(sus)= 45v(min)

·high dc current gain

: hfe= 750(min) @ic= 3a

·low collector saturation voltage

: vce(sat)= 2.0 v(max) @ ic= 3.0 a

·complement to type bdx54

 

applications

·designed for general-purpose amplifier and low-speed

switching applications.

absolute maximum ratings(ta=25℃)

symbol

parameter

value

unit

vcbo

collector-base voltage                     

45

v

vceo

collector-emitter voltage                        

45

v

vebo

emitter-base voltage

5

v

ic

collector current-continuous

8

a

icp

collector current-peak

12

a

ib

base current-continuous

0.2

a

pc

collector power dissipation

@ tc=25℃

60

w

tj

junctiontemperature

150

tstg

storagetemperature range

-65~150

 

thermal characteristics

symbol

parameter

max

unit

rth j-c

thermal resistance,junction to case

1.92

℃/w

electrical characteristics

tc=25℃unless otherwise specified

symbol

parameter

conditions

min

typ.

max

unit

vceo(sus)

collector-emitter sustaining voltage

ic= 100ma; ib= 0

45

 

 

v

vce(sat)

collector-emitter saturation voltage

ic= 3a; ib= 12ma

 

 

2.0

v

vbe(sat)

base-emitter saturation voltage

ic= 3a; ib= 12ma

 

 

2.5

v

vecf

c-e diode forward voltage

if= 3a

 

 

2.5

v

icbo

collector cutoff current

vcb= 45v; ie= 0

 

 

0.2

ma

iceo

collector cutoff current

vce= 22v; ib= 0

 

 

0.5

ma

iebo

emitter cutoff current

veb= 5v; ic= 0

 

 

2.0

ma

hfe

dc current gain

ic= 3a ; vce= 3v

750

 

 

 

本产品的应用范围是放大,品牌是ISC,型号是BDX53,材料是硅(Si),封装形式是直插型,极性是NPN型,结构是平面型,封装材料是塑料封装,是否提供加工定制是是

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