无锡固电ISC 供应BD647 达林顿三极管

symbol

parameter

value

unit

vcbo

collector-base voltage                      

100

v

vceo

collector-emitter voltage                         

80

v

vebo

emitter-base voltage

5

v

ic

collector current-continuous

8

a

icp

collector current-peak

12

a

ib

base current-continuous 

0.3

a

pc

collector power dissipation

@ ta=25℃

2

w

collector power dissipation

@ tc=25℃

62.5

tj

junctiontemperature

150

℃

tstg

storagetemperature range

-65~150

℃

symbol

parameter

conditions

min

typ.

max

unit

vceo(sus)

collector-emitter breakdown voltage

ic= 30ma; ib= 0

80

v

vce(sat)-1

collector-emitter saturation voltage

ic= 3a; ib= 12ma

2.0

v

vce(sat)-2

collector-emitter saturation voltage

ic= 5a; ib= 50ma

2.5

v

vbe(sat)

base-emitter saturation voltage

ic= 5a; ib= 50ma

3.0

v

vbe(on)

base-emitter on voltage

ic= 3a ; vce= 3v

2.5

v

icbo

collector cutoff current

vcb= 80v; ie= 0

0.2

ma

vcb= 50v; ie= 0; tc= 150℃

2.0

iceo

collector cutoff current

vce= 40v; ib= 0

0.5

ma

iebo

emitter cutoff current

veb= 5v; ic= 0

5

ma

hfe

dc current gain

ic= 3a ; vce= 3v

750